Study of thermally-induced optical bistability and the role of surface treatments in Si-based mid-infrared photonic crystal cavities.

We report the observation of optical bistability in Si-based photonic crystal cavities operating around 4.5 µm. Time domain measurements indicate that the source of this optical bistability is thermal, with a time constant on the order of 5 µs. Quality (Q) factor improvement is shown by the use of surface treatments (wet processes and annealing), resulting in a significant increase in Q-factor, which in our best devices is on the order of ~45,000 at 4.48 µm. After annealing in a N(2) environment, optical bistability is no longer seen in our cavities.